Observation of valence band electron emission from n-type siliconfield emitter arrays

机译：从n型硅场发射器阵列发射价带电子的观察

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We investigate the electron emission behavior of n-type Si fieldnemitters in the presence of high applied voltages. Electron emissionnfrom the valence band of an n-type Si field emitter array is reportednfor the first time

机译：我们研究在高施加电压的存在下n型Si场发射体的电子发射行为。首次报道了从n型Si场发射器阵列的价带发射电子

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来源
《Security of Distributed Control Systems, 2005》|2005年|p.170-171|共2页
会议地点 Santa Barbara CA
作者
Meng Ding; Han Kim; Akinwande A.I.;
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作者单位

Microsystems Technol. Lab., MIT, Cambridge, MA;

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原文格式 PDF
正文语种 eng
中图分类自动化技术、计算机技术;
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专利

1. Enhanced electron emission from n-type porous Si field emitter arrays [J] . M. Takai, M. Yamashita, H. Wille, Applied Physics Letters . 1995,第4期

机译：来自n型多孔Si场发射器阵列的增强电子发射
2. Local valence electronic states of SiO_2 ultrathin films grown on Si(100) studied using auger photoelectron coincidence spectroscopy: Observation of upward shift of valence-band maximum as a function of SiO_2 thickness [J] . Kakiuchi T., Fujita N., Mase K., Journal of the Physical Society of Japan . 2011,第8期

机译：用俄歇光电子重合谱研究在Si（100）上生长的SiO_2超薄膜的局部价电子态：观察到价带最大值随SiO_2厚度的变化
3. Measurement of electron energy band structure in the valence band of MgO thin film with and without a sprayed functional layer by secondary electron emission from Auger neutralization - IOPscience [J] . Joon Ho Choi, Chang Gil Son, Young June Hong, Advances in Natural Sciences: Nanoscience and Nanotechnology . 2010,第4期

机译：通过俄歇中和的二次电子发射来测量带或不带喷涂功能层的MgO薄膜价带中的电子能带结构-IOPscience
4. Observation of valence band electron emission from n-type silicon field emitter arrays [C] . Meng Ding, Han Kim . 1999

机译：n型硅场致发射器阵列的价带电子发射的观察
5. Visible electronic emission spectra of diatomic molecules: Analysis of the aluminum oxide (B-X) and boron iodide(a-X) systems, and first observations of some 11-valence electron cations, selenium oxide cation, phosphorus chloride cation, phosphorus bromide cation, and arsenic chloride cation [D] . Naxakis, Stavros 1990

机译：双原子分子的可见电子发射光谱：氧化铝（BX）和碘化硼（aX）系统的分析，以及对11价电子阳离子，氧化硒阳离子，氯化磷阳离子，溴化磷阳离子和氯化砷的初步观察阳离子
6. Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation [O] . V. A. Chirayath, V. Callewaert, A. J. Fairchild, -1

机译：通过正电子an灭在石墨烯中形成价带空穴引发俄歇电子发射
7. The effect of plasma density and emitter geometry on space charge limits for field emitter array electron charge emission into a space plasma [O] . Dave Morris 2001

机译：等离子体密度和发射极几何形状对空间阵列电子电荷发射到空间等离子体的空间电荷限制
8. Highly-Polarized Electron Emission from Strain-Compensated Superlattices and Superlattices with High-Valence-Band Splitting [R] . Rochansky, A. V. 2004

机译：应变补偿超晶格和高价带分裂超晶格的高极化电子发射

Observation of valence band electron emission from n-type siliconfield emitter arrays

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