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SPIN-POLARIZED ELECTRON EMITTER HAVING SEMICONDUCTOR OPTO-ELECTRONIC LAYER WITH SPLIT VALENCE BAND

机译:具有带分裂价带的半导体光电层的自旋极化电子发射器

摘要

An electron emitting element including a semiconductoropto-electronic layer having a split valence band andcapable of emitting a beam of spin-polarized electrons froman emitting surface thereof upon incidence of an excitationlaser radiation upon the emitting surface, and a reflectingmirror formed on one of opposite sides of theopto-electronic layer remote from the emitting surface andcooperating with the emitting surface to effect multiplereflection therebetween of the incident laser radiation. Theemitting element may be provided with a semiconductor lightmodulator element for modulating the intensity of the laserradiation incident upon the opto-electronic layer. A lasersource may be formed integrally with the emitting elementand disposed on the side of the opto-electronic layer remotefrom the emitting surface.
机译:包括半导体的电子发射元件具有分裂价带的光电层和能够从中发射出自旋极化电子束激发时其发射表面发射表面上的激光辐射和反射镜子形成在远离发射表面的光电层和与发射表面配合以实现多重入射激光辐射之间的反射。的发光元件可以设置有半导体灯用于调制激光强度的调制器元件辐射入射到光电层上。雷射源可以与发射元件一体形成并布置在光电层远端的一侧从发射表面。

著录项

  • 公开/公告号CA2106943C

    专利类型

  • 公开/公告日1999-06-29

    原文格式PDF

  • 申请/专利权人 KISHINO KATSUMI;KATO TOSHIHIRO;

    申请/专利号CA19932106943

  • 发明设计人 KISHINO KATSUMI;KATO TOSHIHIRO;

    申请日1993-09-24

  • 分类号H01L49/00;H01J3/02;H01J33/02;

  • 国家 CA

  • 入库时间 2022-08-22 02:24:13

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