High transconductance 0.1 μm Ge/Si_0.4Ge_0.6Schottky-gated p-MODFETs

摘要

In recent years, the enhanced electron and hole mobilitiesndemonstrated in strained-layer Si/SiGe heterostructures have led tondramatic improvements in the dc and rf performance of modulation-dopednfield-effect transistors (MODFETs). The most dramatic advances havenoccurred in p-MODFETs, where high-speed, low-power devices have beennfabricated that rival the performance of n-type devices. In the presentnwork, we report the fabrication and characterization of self-alignednGe-channel p-MODFETs that exhibit superior dc performance compared tonprevious alloy-channel and pure Ge-channel results reported tondate