Organic transistors with low operating voltage and high mobility

摘要

Thin film transistors (TFT) comprising pentacene as thensemiconductor layer and an amorphous metal oxide gate insulators with andielectric constant around 16 were fabricated and tested. Field effectnmobility values up to 0.6 cm² V^-1 s^-1nwith subthreshold slopes up to 0.3 V/decade and current modulationnhigher than 10⁵ were obtained at operating voltages rangingnfrom 4 to 15 V. TFTs fabricated at room temperature on transparentnplastic substrates and exhibiting similar transport characteristics werendemonstrated