Silicon quantum dots in a MOSFET structure: level structure

摘要

We have fabricated silicon quantum dot devices based on a dualngate technique in a silicon MOS technology. Two lateral gates depletenthe inversion layer which is induced by a top gate, thus forming anquantum dot. Hence, the dot is located between the source and drain of anlong channel MOSFET. Here, we report on the dependence of the chargingnof the dot with variation in the top gate, as well as a study of thenmagnetic field effect on the energy level structure