Visible and infrared electroluminescence from Er-doped GaN Schottkydiodes

摘要

Room temperature visible light electroluminescence (EL) has beennobtained for the first time from Er-doped GaN Schottky barrier diodes.nThe EL intensity for visible and IR light was found to increase linearlynwith bias current density. An external quantum efficiency of >0.1%nhas been measured under a reverse bias current of 3.85 mA