SILICON ON INSULATOR (SOI) AND SILICON ON SILICIDE ON INSULATOR (SSOI) WITH 'SMART-CUT' TECHNOLOGY FOR DEVICE APPLICATIONS RESEARCH

摘要

The techniques of silicon on insulator (SOI), and silicon on silicide on insulator (SSOI), using wafer bonding are described. Various methods of producing the required thin layers are discussed with particular reference to "smart-cut" technology where the coalescence of nanocavities produced by H~+ implantation is used to accurately split a slice from a silicon wafer. Applications for the new generation of devices are described including low power, high speed bipolars, system-on-chip systems involving both digital and analogue devices and silicon based microwave circuits.