首页> 外文会议>Second International Symposium on Advanced Luminescent Materials and Quantum Confinement May 13-14, 2002 Philadelphia >OBSERVATION OF THE QUASI-DIRECT RECOMBINATION IN NANOCRYSTALLINE SILICON DOTS BY REDUCING THE CORE DIAMETER
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OBSERVATION OF THE QUASI-DIRECT RECOMBINATION IN NANOCRYSTALLINE SILICON DOTS BY REDUCING THE CORE DIAMETER

机译:减小核心直径观察纳米晶硅点中的准直接复合

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摘要

Photoluminescence (PL) spectra of nanocrystalline-Si (nc-Si) dots with various core diameters are investigated. The PL intensity of the nc-Si dots drastically increases with decreasing core diameter when the core diameter is less than the exciton Bohr radius of bulk Si. Because the amount of the deposited nc-Si dots on each sample is the same, this enhancement of the PL intensity can be explained by the quasi-direct no-phonon-assisted recombination in the nc-Si dot, which is caused by the relaxation of the κ-conservation rule.
机译:研究了具有不同纤芯直径的纳米晶硅(nc-Si)点的光致发光(PL)光谱。当芯直径小于块状Si的激子玻尔半径时,nc-Si点的PL强度随着芯直径的减小而急剧增加。因为在每个样品上沉积的nc-Si点的数量相同,所以PL强度的这种增强可以通过nc-Si点中准直接无声子辅助复合来解释,这是由于弛豫引起的κ守恒规则。

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