DEVICE CHARACTERISTICS OF THE PNP ALGAAS/INGAASN/GAAS DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

We have demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large ΔE_c and a negligible AEv, and this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al_(0.3)Ga_(0.7)As/In_(0.03)Ga_(0.97)As_(0.99)N_(0.01)/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (E_g = 1.20 eV) of In_(0.03)Ga_(0.97)As_(0.99)N_(0.01) used for the base layer, this device has a low V_(ON) of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV_(CEO) is 12 V, consistent with BV_(CEO) of AlGaAs/GaAs HBTs of comparable collector thickness and doping level.