Excellent quality ultra-thin oxides prepared by room temperatureanodic oxidation

摘要

In this work, we present a novel oxide grown on polysilicon bynroom-temperature anodic oxidation (anodic polyoxide). The anodicnpolyoxide exhibits excellent electrical characteristics, i.e. lownleakage current, high dielectric breakdown field, high effectivenelectron barrier height, extremely low electron trapping rate, highncharge-to-breakdown, and long lifetime. These, together with itsnlow-cost and low thermal-budget features, make it very attractive forninter-poly oxide in future high-density nonvolatile memory applications