H_2S Sensing Characteristics of Thin Film SnO_2 Sensor with N_2 Treatment

摘要

SnO_2 thin film sensors were fabricated by a thermal evaporation method. The sensors were heated for thermal oxidation. For high porosity, SnO_2 thin film sensors were treated in a N_2 atmosphere. The sensors that were treated with O_2 after being treated with N_2 showed 70 % sensitivity for 1 × 10~(-6) of H_2S, which is higher than the sensors that were only treated with O_2. The Ni metal, as a catalyst, was evaporated on the thin film Sn on the Al_2O_3 substrate. The sensor was heated to grow the Sn nanowire in a tube furnace with N_2 flow. Sn nanowire was heated for oxidation. The sensitivity of SnO_2 nanowire sensor was measured for 500 × 10~(-9) of H_2S. The selectivity of the SnO_2 nanowire sensor was compared with the thin film and the thick film SnO_2. Each sensor was measured for H_2S, CO, and NH_3 in this study.