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Study of High Capacitance Ratios CPW MEMS Shunt Switches

机译:高电容比CPW MEMS并联开关的研究

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摘要

This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch. In this switch, a metal plate deposited on the dielectric ensures perfectly contact with the dielectric layer in the down state. The area size of the metal plate directly influences the capacitance ratio of the switch, as the area size of the metal cap decreases, the capacitance ratio dramatically rises up. The down/up capacitance ratio can exceed 800 times over the conventional designs using the same materials and the equal size. Measurement results show that high capacitance ratio of the switches has a large effect on the isolation, and can actually improve the performance of the switches.
机译:本文介绍了一种与电容串联的固定-固定束式欧姆开关,以替代电容式开关。在该开关中,沉积在电介质上的金属板可确保在向下状态下与电介质层完美接触。金属板的面积大小直接影响开关的电容比,随着金属盖的面积减小,电容比急剧上升。与使用相同材料和相同尺寸的传统设计相比,向下/向上电容比可以超过800倍。测量结果表明,开关的高电容比对隔离有很大的影响,实际上可以提高开关的性能。

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