首页> 外文会议>Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE >A broadband, millimeter wave, asymmetrical Marchand balun in 180 nm SiGe BiCMOS technology
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A broadband, millimeter wave, asymmetrical Marchand balun in 180 nm SiGe BiCMOS technology

机译:采用180 nm SiGe BiCMOS技术的宽带毫米波不对称Marchand不平衡变压器

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摘要

A silicon-compatible, broadband, millimeter wave Marchand balun operating at a center frequency of 65 GHz is presented. This balun is asymmetrical and broadside-coupled and exhibits excellent performance over a 30–90 GHz frequency range. The gain imbalance is −1.6 dB at 30 GHz, and +0.6 dB at 90 GHz, with a phase imbalance of ± 5.2 degrees, respectively. The balun exhibits good insertion loss and isolation over the frequency range of interest. To the authors'' knowledge, this is the widest bandwidth millimeter wave balun reported to date.
机译:提出了工作在65 GHz中心频率的硅兼容宽带毫米波Marchand巴伦。该不平衡变压器不对称且宽边耦合,在30–90 GHz频率范围内表现出出色的性能。增益不平衡在30 GHz时为-1.6 dB,在90 GHz时为+0.6 dB,相位不平衡分别为±5.2度。平衡-不平衡转换器在感兴趣的频率范围内表现出良好的插入损耗和隔离度。据作者所知,这是迄今为止报道的最宽带宽的毫米波巴伦。

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