DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Orsteds Plads Bldg. 343, 2800 Kongens Lyngby, Denmark;
DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Orsteds Plads Bldg. 343, 2800 Kongens Lyngby, Denmark;
DTU Cen, Center for Electron Nanoscopy, Technical University of Denmark, Building 307, 2800 Kongens Lyngby, Denmark;
University of Rome Tor Vergata, Italy;
DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Orsteds Plads Bldg. 343, 2800 Kongens Lyngby, Denmark;
DTU Nanotech, Department of Micro and Nanotechnology, Technical University of Denmark, Building 345E, 2800 Kongens Lyngby, Denmark;
DTU Nanotech, Department of Micro and Nanotechnology, Technical University of Denmark, Building 345E, 2800 Kongens Lyngby, Denmark;
DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, Orsteds Plads Bldg. 343, 2800 Kongens Lyngby, Denmark;
Epitaxy; quantum dots; self-assembly; selective area growth; block copolymer lithography;
机译:适用于1.55μm波长范围内的电信应用的自组装InAs / InP量子点:波长调谐,堆叠,偏振控制和激射
机译:GS-MBE在基于InP的异质结构上外延生长1.55μm的InAs量子虚线,用于长波长激光应用
机译:RHEED研究(100)InAIAs / InP上InAs量子点的形成过程,以应用于1.55μm范围的光子器件
机译:GS-MBE在基于InP的异质结构上外延生长1.55 / spl mu / m的InAs量子破折号,用于长波长激光应用
机译:MOCVD生长和光电子器件外延量子点的表征。
机译:载流子传输效率及其对电信波长基于InP的量子点-量子阱结构的发射特性的影响
机译:Inp上的量子点的外延生长用于在1.55μm波长范围内操作的器件应用