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Figures of merit for passive and active plasmonic circuits

机译:无源和有源等离激元电路的品质因数

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In this talk, using criteria of bandwidth density and energy consumption for signal guiding and processing, we will introduce comprehensive figures of merit for both passive and active plasmonic architectures of various designs, benchmarking their performance for the realisation of high-bandwidth optical data communication in electronic chips. The introduction of broadband optical signals to transfer and process information revolutionized telecommunications. The use of photonic signals now presents a new paradigm for the next generation of microelectronic chips, where data is transmitted across chips as photonic signals instead of electric ones. This approach will enable the simultaneous transfer of hundreds of signal threads encoded in multiple wavelengths along a data line, compared with effectively only one thread in an electronic wire, boosting the data transfer around chips, and leading to a huge rise in their computational power. Presently, it has become a very hot research topic with numerous techniques and designs proposed to achieve efficient plasmonic signal guiding and active control. In this talk. we present a global approach for benchmarking various both passive and active plasmonic-based circuit architectures of various designs, with a particular emphasis on the their integral performance, while revealing the link connecting it to the performance of individual components. A figure of merit (FOM) will be derived for passive plasmonic circuitry on the basis most general and practically relevant considerations of the data traffic and power dissipation densities, which appeared to be related to the standard local waveguide characteristics, such as the bandwidth, signal propagation length and integration parameters. This allows to generalize all previous FOM approaches, particularly revealing a previously overlooked bandwidth factor, and on this basis to benchmark the performance of the main types of plasmonic waveguides. Then, we will introduce an all-inclusive active FOM and will benchmark the performance of photonic or plasmonic-based electro-optical, thermo-optical and all-optical modulators, revealing qualitative advantages of the plasmonic switching approach compared to the best traditional state-of-the-art photonic designs.
机译:在本次演讲中,我们将使用带宽密度和能量消耗的准则进行信号引导和处理,我们将介绍各种设计的无源和有源等离激元体系结构的综合品质因数,对它们在实现高带宽光数据通信中的性能进行基准测试。电子芯片。宽带光信号的引入用于传输和处理信息,彻底改变了电信。现在,光子信号的使用为下一代微电子芯片提出了新的范例,其中数据以光子信号而不是电信号的形式在芯片上传输。与有效地仅一根电线中的一根线相比,这种方法将能够沿数据线同时传输数百条以多种波长编码的信号线,从而有效地促进了芯片周围的数据传输,并极大地提高了它们的计算能力。当前,已经提出了许多技术和设计以实现有效的等离子体信号引导和主动控制,这已经成为非常热门的研究课题。在这个话题上。我们提供了一种基准测试各种设计的基于无源和有源等离子体的电路架构的全球方法,特别强调了它们的整体性能,同时揭示了将其与各个组件的性能联系起来的方法。将基于数据流量和功耗密度的最一般和最实际相关的考虑,得出无源等离子体电路的品质因数(FOM),这似乎与标准的本地波导特性有关,例如带宽,信号传播长度和积分参数。这可以归纳所有以前的FOM方法,特别是揭示先前被忽略的带宽因子,并以此为基准来对主要类型的等离激元波导的性能进行基准测试。然后,我们将介绍一个全包式有源FOM,并以光子或基于等离子体的电光,热光和全光调制器的性能为基准,揭示与最佳传统状态相比,等离子体切换方法在质量上的优势-最先进的光子设计。

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