A 65nm CMOS 30dBm class-E RF power amplifier with 60 power added efficiency

机译：65nm CMOS 30dBm E类射频功率放大器，功率附加效率提高60％

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A 30 dBm single-ended class-E RF power amplifier (PA) is fabricated in 65 nm CMOS technology. The PA is a cascode stage formed by a standard thin-oxide device and a high voltage extended-drain thick-oxide device. Both devices are implemented in a standard

机译：采用65 nm CMOS技术制造的30 dBm单端E类RF功率放大器（PA）。 PA是由标准薄氧化物器件和高压扩展漏极厚氧化物器件形成的共源共栅级。两种设备均以标准实现

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来源
《Program Comprehension (IWPC 2005), 13th International Workshop on; Atlanta,GA,USA》||P.141-144|共4页
会议地点 AtlantaGAUSA
作者
Apostolidou; M.; van der Heijden; M.P.; Leenaerts; D.M.W.; Sonsky; J.; Heringa; A.; Volokhine; I.;
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原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; CMOS technology; Class E RF power amplifier; cascode stage; frequency 2 GHz; power added efficiency; power-added efficiency; self-biasing; size 65 nm; CMOS PA; HV device; PAE; cascode; class-E; dri;

机译：CMOS集成电路; UHF集成电路; UHF功率放大器; CMOS技术; E类RF功率放大器;级联级;频率2 GHz;功率附加效率;功率附加效率;自偏置;尺寸65 nm; CMOS PA; HV器件; PAE; cascode; class-E; dri;

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专利

1. A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS [J] . Aritra Banerjee, Rahmi Hezar, Lei Ding, IEEE transactions on circuits and systems . I , Regular papers . 2017,第8期

机译：具有45nm CMOS效率和输出功率增强电路的29.5 dBm E类同相RF功率放大器
2. Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers [J] . Hung-Lung Tu S., Toumazou C. IEEE Transactions on Circuits and Systems. 1 . 1999,第5期

机译：负载质量因数对CMOS E类RF调谐功率放大器的功率效率的影响
3. A Novel Fully Differential CMOS Class-E Power Amplifier with Higher Output Power and Efficiency for IoT Application [J] . Ghorbani A. R., Ghaznavi-Ghoushchi M. B. Wireless personal communications: An Internaional Journal . 2017,第2期

机译：一种新型全差分CMOS Class-E功率放大器，具有较高的输出功率和IOT应用效率
4. A 65nm CMOS 30dBm class-E RF power amplifier with 60 power added efficiency [C] . Apostolidou M., van der Heijden M.P., Leenaerts D.M.W., IEEE Radio Frequency Integrated Circuits Symposium . 2008

机译：65nm CMOS 30DBM Class-E RF功率放大器，功率增加60％
5. Optimized class-E RF power amplifier design in bulk CMOS. [D] . Wang, Tao. 2007

机译：批量CMOS中经过优化的E类RF功率放大器设计。
6. Transcutaneous RF-Powered Implantable Minipump Driven by a Class-E Transmitter [O] . William H. Moore, Daniel P. Holschneider, Tina K. Givrad, -1

机译：由E类发射机驱动的经皮射频供电的可植入微型泵
7. A 5-GHz Class-E Power Amplifier with an Inverse Class-B Driver on 65nm CMOS [O] . Love Matthew, Decle Colin Daniel, Thian Mury 2017

机译：具有65nm CMOS的反向B类驱动器的5 GHz E类功率放大器

A 65nm CMOS 30dBm class-E RF power amplifier with 60 power added efficiency

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