Integrated deposition of TiN barrier layers in cluster tools

摘要

Abstract: Ti and TiN layers have several applications in VLSI devices as antireflective coatings, step coverage enhancement, adhesion layers for blanket tungsten CVD, and, with increasing importance, as diffusion barriers. This work describes the development of a simple and reproducible reactive sputtering process for TiN, using a BALZERS ARQ 150 DC planar magnetron with a multichamber process system. Resistivity and uniformity, deposition rate, stoichiometry, and stress, and their dependence upon sputter source power, sputtering pressure, argon to nitrogen ratio, and substrate temperature were investigated. A process window is specified with resistivity values below 70 $mu ohm-cm, film uniformity better than $POM@5% over a 200 mm wafer, deposition rates up to 100 nm/minute, and residual stress below 5 $MUL 10$+9$/ dynes/cm$+2$/.!16