首页> 外文会议>Proceedings vol.2005-09; European Conference on Chemical Vapor Deposition(EURCVD-15); 20050905-09; Bochum(DE) >IN-SITU QUARTZ CRYSTAL MICROBALANCE INVESTIGATION OF ATOMICE LAYER DEPOSITION OF Cu_3N
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IN-SITU QUARTZ CRYSTAL MICROBALANCE INVESTIGATION OF ATOMICE LAYER DEPOSITION OF Cu_3N

机译:Cu_3N原子层沉积的原位晶体微平衡研究

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摘要

Cu_3N is a promising material for optical data storage and copper metallisation. Upon heating the metastable Cu_3N decomposes into metallic copper and nitrogen gas. Films have been grown with a novel ALD (Atomic Layer Deposition) process using copper(II) hexafluoro-acetylacetonate (Cu(hfac)_2), water and ammonia as precursors. By adding an intermediate water pulse the growth rate was enhanced on oxide substrates. The water was used with the purpose of producing sacrificial oxide layers. The mass changes during the deposition cycles were measured by in-situ Quartz Crystal Microbalance (QCM) technique. Extensive hfac removal was observed during Cu(hfac)_2 adsorption, yielding a surface composition of Cu(hfac)_(0.4) (ad) for short pulses.
机译:Cu_3N是用于光学数据存储和铜金属化的有前途的材料。加热后,亚稳态Cu_3N分解为金属铜和氮气。使用六氟乙酰丙酮化铜(II)(Cu(hfac)_2),水和氨作为前体,采用新颖的ALD(原子层沉积)工艺生长薄膜。通过添加中间水脉冲,在氧化物基底上的生长速率得以提高。使用水是为了产生牺牲氧化物层。通过原位石英晶体微天平(QCM)技术测量沉积周期中的质量变化。在Cu(hfac)_2吸附过程中观察到广泛的hfac去除,短脉冲产生Cu(hfac)_(0.4)(ad)的表面成分。

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