CHARACTERIZATION OF ULTRA-SHALLOW IMPLANTED P~+ LAYER ON P-TYPE SILICON SUBSTRATES AFTER FLASH ANNEAL AND CONVENTIONAL RAPID THERMAL ANNEAL

摘要

Electrical activation and dopant diffusion behavior of ultra-shallow B and BF_2 implanted p-type silicon wafers with various implant energies and dosages were studied before and after a novel millisecond flash anneal and a conventional tungsten halogen lamp-based rapid thermal anneal (RTA). Sheet resistance of implanted wafers was measured using a four point probe and B depth profiles were measured using secondary ion mass spectroscopy (SIMS) before and after annealing. Depth profiles of resistivity were also measured by using the spreading resistance profiling (SRP) method. SIMS depth profiles and resistivity profiles from SRP were compared. Flash annealing was found to be very effective in achieving nearly diffusion-free activation of ultra-shallow implanted layers with or without pre-amorphization implantation (PAI) of Ge.