IMPROVING CMOS PERFORMANCE BY AVD~reg; GROWN HIGH-K DIELECTRICS AND ADVANCED METAL ELECTRODES

摘要

We demonstrate the ability to process high quality dielectrics and gate electrodes for next generations of CMOS devices facilitated by our AVD~® (Atomic Vapor Deposition) technology, which is described here in detail. The electrical properties of thin hafnium oxide layers grown by AVD~®, including CV and IV behavior, and the influence of varied post deposition annealing steps are discussed.