ATOMICALLY FLAT SURFACE OF HYDROGEN TRANSFERRED SI FILM WITH BORON DELTA DOPED LAYER

摘要

Formation of interior hydrogen-passivated surfaces in hydrogen-implanted single-crystal Si containing a buried layer delta-doped with boron is investigated. With the use of infrared absorption spectroscopy and AFM measurements, the kinetics of defect transformation upon annealing and the morphology of the surface after splitting are studied. It is shown that, upon annealing, the concentration of the hydrogen-contained defects are lower but the composition of the defects in Si samples containing a buried heavily doped layer is about the same as in Si samples that do not have such a layer. There is only small difference as one new line red shifted during annealing. When a thin exfoliated film is transferred onto an insulator to form a silicon-on-insulator structure, the surface roughness of the film is equal to 0.1-0.3 nm as for initial Si wafer. Contrary, highly faceted by (111) planes (100) surface was formed with average rms roughness near 10 nm in the control wafers without boron delta-doped layer. High flatness of the splitted surface is explained by B-SiH monohydride dimmers formation on the flat (100) surfaces of micropores.