THE EFFECT OF DISSOCIATED OXYGEN ON THE OXIDATION OF SI, POLYCRYSTALLINE SIC AND LPCVD SI_3N_4

摘要

The oxidation of silicon, polycrystalline silicon carbide, and LPCVD silicon nitride in dissociated oxygen and N_2O environments at approximately 900℃ has been investigated. Oxidation in dissociated environments is significantly increased over oxidation in molecular environments. Deal-Grove parabolic (B) and linear (B/A) rate constants are determined for the oxidation of each material. For the times and conditions of these experiments all oxidations were diffusion rate limited, as defined by the Deal-Grove criterion t A~2/(4B). The parabolic rate constants for SiC, Si_3N_4, and Si were 4180 A~2/min, 4151 A~2/min, and 3054 A~2/min, respectively.