DIELECTRIC DEGRADATION OF GATE SiO_2 FILMS BY Cu CONTAMINATION POSTERIOR TO POLYCRYSTALLINE Si GATE MOS CAPACITOR FABRICATION

摘要

Degradations of the dielectric characteristics of gate SiO_2 films by Cu contamination were investigated after the polycrystalline Si gate MOS capacitors were fabricated. Even at 400C, the humps of the leakage current-gate voltage characteristics were found, the wearout lifetime of the time dependent dielectric breakdown was deteriorated by long term Cu contamination, and the accidental breakdown events were also increased. In the contamination experiment from the Cu adsorbed contact hole, the humps were observed in the contamination range of more than 10~(11) cm~(-2).