STRUCTURAL AND LIGHT-EMITTING PROPERTIES OF WURTZITE InN FILMS GROWN ON Si(111) BY MOLECULAR-BEAM EPITAXY

摘要

Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ～1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.