Integration of Single Crystal BaTiO_3 and LiNbO_3 Thin Films on Si: Synthesis, Microstructure, and Characterization

摘要

We report on the layer transfer of thin ferroelectric materials onto silicon substrates. H~+ and He~+ ion implantation created a buried sacrificial layer in the z-cut BaTiO_3 and LiNbO_3 single crystals. The thermodynamics of cavity nucleation at the splitting interface have been investigated, and single crystal thin film layers were transferred onto crystalline silicon substrates. Defects generated by ion implantation in BaTiO_3 and LiNbO_3 can be significantly recovered with the subsequent annealing required for layer splitting. Following layer transfer BaTiO_3 and LiNbO_3 films remain single crystalline and stoichiometric. Electrical characterization indicates the films are ferroelectric, with a regular domain structure and piezoresponse similar to that of bulk BaTiO_3 and LiNbO_3 crystals.