COPPER-BARRIER AND HARD-MASK ELABORATION BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION USING ORGANOSILANE PRECURSORS

摘要

This paper presents a new amorphous SiC:H film deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) using an advanced liquid precursor. Plasma conditions are optimised and in all cases, films are characterised using several techniques. Due to its physical and chemical properties this type of layer can be used for various applications in damascene interconnect scheme such as dielectric hard-mask (HM) and copper barrier (CB) applications.