Infrared and far-infrared absorption and emission by hot carriers in GaAs/AlGaAs and Ge/GeSi multiple quantum wells

摘要

The optical phenomena in strong heating electric field applied along the layers of multiple quantum well structures were investigated experimentally and theoretically. Change of infrared and far-infrared absorption coefficient for two loight polarizations due to inter-and intra-subband transitions of hot carrier was experimentally observed in GaAs/AlGaAs and Ge/GeSi structures. Calculations took into account e lectron heating, nonparabolicity and exchange interaction. The temperatures of hot electrons and holes were determined fron experimental data. The far-infrared spectra of spontaneous emission caused by mintersubband transitions of hot holes were investigated. Experimental data agree with theory.