New dynamic model for laterlally nonuniform MQW FP ridge laser including parasitics

摘要

We present new model of laterally nonuniform MQW FP diode laser which includes carrier capture/escape, lateral diffusion, gain compression and naturally takes into account parasitic structure capacitance and parameters of driving circuit. The procedure is based on simultaneous solution of rate equations written in local from and a matrix equation relating local bias and local current density with the total purnping current determined by the driving circuit. Simulation of CW characterics of ridge laser demonstrates pronounced lateral hole dburning effect at high power. Simulated small signal response has considerable low frequency roll-on at low power while at high power common roll-off is observed.