Determination of valence-band offset of p-Al_xGa_(1-x)As/p-Al_xGa_(1-x)As-heterojunctions from C-V-measurements

摘要

The isotype heterojections p-Al_(0.2)Ga_(0.8)As/p-Al_(0.5)Ga_(0.5)As grown by MOVPE on n-GaAs substrates were investigated at the temperatures of 300, 200 and 150 K. For determination of valence-band discontinuity DELTA E_v and interface charge N_(ss) the Poisson equation was solved numerically on an adaptive nonunifom coordinate meash. An incomplete ionization of acceptors was taken into consideration. The DELTA E_v proved to be equal 113 meV (38