Application of ODMR and level-anticrossing specttroscopy for characterization of GaAs/AlAs superlattices

摘要

We applied optically detected magnetic resonance and exciton level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices grown under different conditions including growth interruptions. A differfence in exchange splitting of exitons localized at opposite interfaces was found and the naute of an additional low-eneryg emission line in superlattices grown with interruptions after GaAs laers was clarified. Linear polarization at anticrossings in type-I SL revealed an existence of a splitting of the exition radiative levels.