Electrical and photoluminescent properties of Pr_2O_3 associate InP and InGaAs liquid phase epitaxy

摘要

InP and InGaAs epilayers were grown on the semi-insulating(SI)InP substrates by liquid phase epitaxy(LPE) with a rate-earth(RE) compound Pr_2O_3 doping into growth melt during each epitaxial process. Mos grown layers yield mirror-like surfaces and good crystal quality. By adding of Pr_2O_3, the corresponding Hall measurements indicate that n-type background concentration of those InP and InGaAs grown lavers will decrease from a value of 2.8 x 10~(17) to 3.0 x 10~&16) cm~(-3) and from 1.6 x 10~(15) cm~(-3), respectively. Their correspondent 77K mobility also significantly increases rom a value of 1326 to 3775 cm~2/V-s and from 15321 to 32171 cm~2/V-s. The photoluminescence(PL) spectra of Pr_2O_3 doped InP and InGaAs eplilayers display strong intensity ratios for band peak to the impurity peak, which also demonstrates the fact that the grown layers exhibit a pureier crystal quality.