Gas Species Comparison of Fast Atom Beam Irradiation to Photoluminescence Properties of GaInAs/InP layers for Surface Activated Bonding

摘要

Hydrophilic bonding or plasma activated bonding (PAB) rnare usually used for hybrid wafer bonding. However, to achievernhigh bonding strength, annealing temperature of higher thanrn150℃, resulting in the thermal stress caused by the differencernbetween thermal expansion coefficients of bonded wafers, andrnlong cooling time are required. To deal with the mentionedrnproblems, surface activated bonding (SAB) based on fast atomrnbeam (FAB) was proposed in recent years, which can realizernwafer bonding at room temperature. In our previous report, wernreported the influence of Ar-FAB to photoluminescencernproperties of GaInAs/InP wafers . In this report, we assessedrnthe influence by other gases N2 and Xe.