A perverse transparent oxide semiconductor, La:BaSnO_3

摘要

La-doped BaSnO_3(LBSO) is one of the most promisingtransparent oxide semiconductors (TOSs) since its single crystal exhibitsahigh mobility of 320 cm~2 V~(−1) s~(−1).However, the electron mobility of LBSOthinfilms are less than150 cm~2 V~(−1) s~(−1).Electron scatteringsat threading dislocations caused by the film/substrate lattice mismatchare widely considered as the main origin of mobility suppression in LBSO films.Nevertheless, the mobilityvalueofdepositedLBSO epitaxial films still below 100 cm~2 V~(−1) s~(−1)even ifBaSnO_3 single crystal substrateswere usedto minimize the lattice mismatch.In addition,the electron transport properties of LBSO films were not significantly affected by thelattice mismatch andexhibiteda strong thickness dependence.