首页> 外文会议>2018年第65回応用物理学会春季学術講演会講演予稿集 >Bruno mechanism on voltage-controlled magnetic anisotropyin ultrathin cobalt films
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Bruno mechanism on voltage-controlled magnetic anisotropyin ultrathin cobalt films

机译:电压控制磁各向异性的布鲁诺机理 r n超薄钴膜

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摘要

Voltage-controlled magnetic anisotropy (VCMA) in 3J-transition metals such as Fe and Co has been intensively studied [1]. While one mechanism to explain the VCMA is Bruno mechanism [2], that is, voltage-induced change in orbital magnetic moment in ferromagnetic metals, it has recently been pointed out the significance of the electric quadrupole mechanism to the VCMA in case Pt/MgO interface is employed [3]. However, there has been no report experimentally demonstrating the relative significance between the Bruno and the electric quadrupole mechanisms in 3 J-ferromagnetic metals because of alack of direct observation of the voltage -induced change of orbital magnetic moment in ferromagnetic metals.
机译:深入研究了3J过渡金属(如Fe和Co)中的压控磁各向异性(VCMA)[1]。 Bruno机制[2]是解释VCMA的一种机制,即铁磁金属中电压引起的轨道磁矩变化,但最近指出了在Pt / MgO的情况下电四极子机制对VCMA的重要性。接口被采用[3]。然而,由于缺乏直接观察电压感应铁磁金属中轨道磁矩变化的观察结果,因此尚无实验证明在3 J铁磁金属中布鲁诺和四极电机制之间相对重要性的报道。

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