Novel optical and e-beam lithographic techniques for semiconductor device processing

摘要

Lithographic processes play a central role in semiconductor processing. As the device size continues to shrink and circuis become more complex, the need for new lithographic techniques arises. We demonstrate three novel techniques utilizing both optical and electronbeam systems. The first technique uses a two step optical lithography process to create T-shaped features thus eliminating the need for e-beam techniques. Using a similar technique we demonstrate a 100percent reduction in line width for an optical stepper. Finally, we demonstrate a sub-micron gate process that only requires a single lithography step and single gate recess, which provides not only a low resistance gate but also a wider trench on the drain side for high breakdown voltage power applications.