GaAs-Based jfet and phemt technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz

摘要

In this work we report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and PHEMT GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a MMIC with onchip matching. The hybrid amplifier achieved 8-10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 #mu#m PHEMTs. 25 #mu#W power levels were achieved with 5 dB of gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, HFET, or Si bipolar results from other laboratories.