School of Electronics Engineering and Computer Science, Peking University Beijing, P.R Xhina 100871;
School of Electronics Engineering and Computer Science, Peking University Beijing, P.RXhina 100871;
School of Electronics Engineering and Computer Science, Peking University Beijing, P.R Xhina 100871;
School of Electronics Engineering and Computer Science, Peking University Beijing, P.R Xhina 100871;
School of Electronics Engineering and Computer Science, Peking University Beijing, P.R Xhina 100871;
School of Electronics Engineering and Computer Science, Peking University Beijing, P.R Xhina 100871;
amorphous indium-gallium-zinc-oxide (a-IGZO); thin film transistors (TFTs); source drain series resistance (Rsd); channel resistance per unit length (Rch);
机译:具有选择性定义的低电阻a-IGZO源/漏电极的高性能同质结a-IGZO TFT
机译:源代到栅极和漏极 - 栅极重叠长度对蚀刻停止器的倒置交错A-IGZO TFT性能的影响
机译:通过源/排水湿法蚀刻期间通过氟处理增强后通道蚀刻A-IGZO TFT的操作
机译:漏极诱导势垒降低(DIBL)和寄生TFT导致a-IGZO TFT的不稳定性
机译:用于自对准IGZO TFT的植入活性源/漏区
机译:后处理对a-IGZO TFT上的Cu-Cr源/漏电极的影响
机译:具有减少的特征尺寸和清洁蚀刻止动层结构的A-IGZO TFT的可靠性
机译:电流流入源/漏区接触电阻的三维建模