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The Instability of a-IGZO TFT Caused by the Drain Induced Barrier Lowering (DIBL) and Parasitical TFT

机译：漏极诱导势垒降低（DIBL）和寄生TFT导致a-IGZO TFT的不稳定性

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The instability of a-IGZO TFT-including oxygen and water and photosensitivity effect-has been studied widely, but no definitive mechanism was given so far. In this work, the instability caused by the drain induced barrier lowering (DIBL) as well as parasitical TFT was studied and a proposed model was provided.

机译：已经广泛研究了a-IGZO TFT的不稳定性，包括氧和水的不稳定性以及光敏性效应，但是到目前为止，还没有给出确定的机理。在这项工作中，研究了由漏极引起的势垒降低（DIBL）以及寄生TFT引起的不稳定性，并提供了一个建议的模型。

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《IDW '10;International display workshops》|2011年|p.1859-1861|共3页
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Ming-Chin Hung; Chun-Hao Tu; Wei-Ting Lin; Jiun-Jye Chang; Po-Lun Chen;
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中图分类显示设备、显示器;
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1. Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs [J] . Raja J., Jang K., Nguyen C.P.T., Electron Device Letters, IEEE . 2014,第7期

机译：短沟道InSnZnO TFT中的漏极引起的势垒降低和寄生电阻引起的不稳定性
2. Electrical Instability of Double-Gate a-IGZO TFTs With Metal Source/Drain Recessed Electrodes [J] . IEEE Transactions on Electron Devices . 2014,第4期

机译：具有金属源极/漏极嵌入式电极的双栅极a-IGZO TFT的电不稳定性
3. Drain-Induced Barrier Lowering in Short-Channel Poly-Si TFT After Off-Bias Stress Using Metal-Induced Crystallization of Amorphous Silicon [J] . Lee U. G., Jang J. Electron Device Letters, IEEE . 2011,第9期

机译：利用非晶硅的金属诱导结晶，在偏置应力之后，短沟道多晶硅TFT中的漏极诱导势垒降低
4. The Instability of a-IGZO TFT Caused by the Drain Induced Barrier Lowering (DIBL) and Parasitical TFT [C] . Ming-Chin Hung, Chun-Hao Tu, Wei-Ting Lin, International display workshops . 2010

机译：漏极引起的屏障降低（DIBL）和寄生TFT引起的A-IGZO TFT的不稳定性
5. A Semi-empirical Compact Model for IGZO TFT to Assess the Impact of Parasitic Elements in Active Matrix Pixel Designs [D] . Rubio Rivera, Hector Alejandro. 2020

机译：IGZO TFT的半经验紧凑型模型，以评估寄生元素在有源矩阵像素设计中的影响
6. Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs [O] . Shiben Hu, Zhiqiang Fang, Honglong Ning, 2016

机译：后处理对a-IGZO TFT上的Cu-Cr源/漏电极的影响
7. A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates [O] . Jin-Seob Kim, Yu-Mi Kim, Kwang-Seok Jeong, 2014

机译：基于具有不同氧气流量的A-IGZO TFT中的负U中心的光引感阈值不稳定性
8. Threshold Voltage Instability in A-Si:H TFTS and the Implications for Flexible Displays and Circuits [R] . Allee, D., Clark, L., Shringarpure, R., 2008

机译：a-si：H TFTs中的阈值电压不稳定性及其对柔性显示器和电路的影响

The Instability of a-IGZO TFT Caused by the Drain Induced Barrier Lowering (DIBL) and Parasitical TFT

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