An Improved Effective Channel Mobility Model for Poly-Si Thin Film Transistors

摘要

An improved effective channel mobility (μeff) model with explicit physical base for poly-Si thin film transistors (TFTs) is proposed. It is more general than our previous model by considering the details of the drain voltage drop across grain boundaries. All parameters can be extracted following proposed extraction procedure. Low temperature processed n-type poly-Si TFTs with a series of channel widths and lengths are modeled. Excellent fitting performance is obtained. The difference between the extracted and fitting values of model parameters is within 10%.