首页> 外文会议>Proceedings of China display / Asia display 2011 >S2-28: A Precise Macro Model of Low Temperature Poly-Silicon Thin Film Transistor for Active Matrix Organic Light Emitting Diode Display
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S2-28: A Precise Macro Model of Low Temperature Poly-Silicon Thin Film Transistor for Active Matrix Organic Light Emitting Diode Display

机译:S2-28:用于有源矩阵有机发光二极管显示器的低温多晶硅薄膜晶体管的精确宏模型

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摘要

A macro model of low temperature poly-silicon thin film transistor (LTPS TFT) is proposed to evaluate the performance of active matrix organic light emitting diode (AMOLED) display panel circuit with LTPS technology. In this paper, the circuit structure and the component parameters extraction of the macro model are presented. The effect of hysteresis is expressed with this macro model. The hysteresis results in threshold voltage shift of LTPS TFTs that will degrade the uniformity of AMOLEDs display. With this macro model, we can explore efficient AMOLEDs display back panel circuit with careful consideration of the effect of hysteresis.
机译:提出了一种低温多晶硅薄膜晶体管(LTPS TFT)的宏观模型,以评估采用LTPS技术的有源矩阵有机发光二极管(AMOLED)显示面板电路的性能。本文介绍了宏模型的电路结构和组成参数的提取。磁滞的影响用该宏模型表示。迟滞导致LTPS TFT的阈值电压偏移,这将降低AMOLED显示器的均匀性。借助该宏模型,我们可以仔细考虑滞后效应,从而探索出高效的AMOLED显示背板电路。

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