Analysis of Capacitance Behavior for Short-Chanel Accumulation-Mode SOI PMOS Devices

摘要

This paper reports the caacitance behavior of short-channel accumulaton-mode SOI PMOS devices. Based on the study, compared to the inversion-mode device, the acumulation-mode SOI PMOS device has a gradual transition in C_GS from subthreshold to accumulation due to the effect of the buried channel.