Electrical Modelling of Kelvin Structures for the Derivation of Low Specific Contact Resistivity

摘要

The characterisation of semiconductor processing steps requires the use of various test structures and devices. In developing low resistance ohmic contacts, test structures such as the Cross Bridge Kelvin Resistor which allow the extraction of the specific contact resistance, #rhu#_C are commonly used. This paper describes the results of modelling undertaken on a Kelvin Resistor. The results suggest that the use of multiple structures allows the determination of very low values of #rhu#_C.