首页> 外文会议>Proceedings of 2012 21st IEEE ISAF held jointly with 11th IEEE ECAPD and IEEE PFM (ISAF/ECAPD/PFM 2012) >Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films
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Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films

机译:多晶PZT薄膜的纳米结构和厚度与厚度的关系

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Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the filmsubstrate interface are not primarily responsible for the observed self-polarization effect in our films.
机译:通过聚合化学方法在Pt(111)/ Ti / SiO2 / Si衬底上沉积锆酸钛酸铅Pb(Zr0.50Ti0.50)O3(PZT)薄膜,以了解相变的机理以及膜厚对Pt(111)/ Ti / SiO2 / Si的影响这些薄膜的结构,介电和压电性能。在高于350°C的温度下热解的PZT膜呈现出烧绿石和钙钛矿相共存,而在低于300°C的温度下热解的膜中仅钙钛矿相生长。对于不含烧绿石的PZT薄膜,在膜-基底界面附近观察到小的(100)取向趋势。最后,我们证明了在研究的PZT薄膜中存在自极化效应。结果表明,薄膜基材界面附近的肖特基势垒和/或机械耦合不是造成我们薄膜中自极化效应的主要原因。

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