Ⅲ-Ⅴ MOSFET Structure (InP/InAs/InGaAs) Ⅰ-Ⅴ Characteristics Using Silvaco TCAD Simulator

摘要

Our work is used to investigate the electrical proprieties of Ⅲ-Ⅴ MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from an InP/InAs/InGaAs structure. This simulation is done using Silvaco TCAD tools. We solve the coupled Poisson-Schrodinger equation that gives the carriers concentration and their eigen state energies at each level. The fundamental equations are based on the conventional drift-diffusion model of charge transport with Fermi-Dirac statistics and electric field-dependent mobility model. We present the charge control in channel and the complete Ⅰ-Ⅴ characteristics of InP/InAs/InGaAs MOSFET. The results obtained show the output Id-V_(ds) and the transfer Id-V_(gs) characteristic with Lg = 50 nm and To x = 4 nm. Ion of 330 mA/mm and maximum transconductance Gm of 405 mS/mm were calculated at Vd = 0.05 V. The transfer and Gm characteristics of this structure are shown with L_g of 150 nm and 100 nm respectively. Ion and G_(m,max) reach to (270-280) mA/mm and (328-346) mS/mm respectively. It is found that the threshold voltage decreases as the channel length is reduced.