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Ultra low-voltage ultra low-power CMOS threshold voltage reference

机译:超低压超低功耗CMOS阈值电压基准

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A simple voltage reference source in weak inversion CMOS for ultra low-voltage and ultra low-power applications is presented. Its voltage reference is provided by the threshold voltage of an nMOS transistor, as it can be verified in the theoretical deduction presented and by the BSIM3v3 simulations. The circuit simulated in a standard 0.35μm CMOS process provided a voltage reference of 512.03mV with a variation of just 33ppm°C for the temperature range of - 30°C to 100°C, and ± 0.42%/V variation for the power supply ranging from 750mV to 3.60V. The circuit takes a total area of 0.06mm2 and requires only 800nA of biasing current.
机译:提出了一种用于超低压和超低功耗应用的弱反相CMOS中的简单基准电压源。它的参考电压由 n MOS晶体管的阈值电压提供,可以通过提出的理论推导和BSIM3v3仿真进行验证。在标准0.35μmCMOS工艺中模拟的电路提供的参考电压为512.03mV,在-30°C至100°C的温度范围内变化仅为33ppm°C,电源变化为±0.42%/ V范围从750mV至3.60V。该电路的总面积为0.06mm 2 ,仅需要800nA的偏置电流。

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