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Pulse width modulation for reduced peak power full-swing on-chip interconnect

机译:脉冲宽度调制可降低峰值功率全摆幅片上互连

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A full-swing on-chip interconnect using pulse width modulation (PWM) was designed and fabricated in 0.25μm CMOS for application in a tiled signal processing array architecture targeting wireless sensor nodes. Measurements show a decrease in the worst case power of 7% over traditional binary signaling for 11.8mm long wires at 10Mbps throughput and 0.7V VDD. Power savings are projected to increase to 20% for 30mm long wires, while becoming beneficial for shorter wires at future process nodes without multiple wires or power rails. Power savings occur for wire lengths greater than 1.34mm and reach 20% at 3.03mm at the 32nm node. Savings are also projected to reach 18.2% when used on wires spanning 16 tiles in the target architecture.
机译:在0.25μmCMOS中设计并制造了使用脉宽调制(PWM)的全摆幅片上互连,以用于针对无线传感器节点的平铺信号处理阵列架构。测量表明,对于在10Mbps吞吐率和0.7V VDD时长11.8mm的导线,最坏情况下的功率比传统的二进制信号降低了7%。对于30mm长的电线,节电预计将增加20%,同时对于将来无需多条电线或电源导轨的工艺节点上的较短电线来说,这将是有益的。线长大于1.34mm时可节省功率,而在32nm节点处的3.03mm时可达到20%。当在目标架构中跨16个磁贴的导线上使用时,节省的费用预计也将达到18.2%。

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