首页> 外文会议>Proceedings of the 10th symposium on accelerator science and technology >RF CHARACTERISTICS OF THE BULLET-SHAPE SiC ABSORBER FOR KEKB
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RF CHARACTERISTICS OF THE BULLET-SHAPE SiC ABSORBER FOR KEKB

机译:KEKB的子弹形SiC吸收体的射频特性。

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Sixteen bullet-shape sintered SiC (silicon carbide) ceramics were used as the HOM absorbers for a prototype of KEK B-factory (KEKB) normal conducting cavity[1]. RF simulations show that the reflection rate from the SiC absorber increases abruptly when the frequency decreases under 1GHz. This behavior can be explained as the attenuation property of a cylindrical dielectric waveguide. The RF characteristics of the SiC absorber are discussed by analyzing properties of the cylindrical dielectric waveguide.
机译:十六个子弹形的碳化硅(SiC)陶瓷被用作KEK B工厂(KEKB)法向导电腔原型的HOM吸收剂[1]。射频仿真表明,当频率降低到1GHz以下时,SiC吸收体的反射率会突然增加。这种行为可以解释为圆柱形介质波导的衰减特性。通过分析圆柱介质波导的特性,讨论了SiC吸收体的RF特性。

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