Electron-beam-pulse induced time-domain depolarization in plasma deposited hydrogenated carbon-silicon films

摘要

In this paper the new experimental technique based on VPITDD but using electron-beam excitation is presented. Results obtained for plasma deposited films produced from TMS are discussed in detail. It is shown that carriers generated by an electron-beam pulse do not reach the collecting electrode but are deeply trapped after one or a few jumps. The VPITDD analysis performed for this case is in a good correlation to the former results of VPITDD measurements carried out on the same material by using millisecond excitation. It is noteworthy that although no carriers reach the collecting electrode the results can be described well by the standard Scher-Montroll formalism used for calculation of the carrier mobility. The estimation of carrier time-of-flight has, however, no physical meaning in this case. It seems that this conclusion is more general, especially in the case of amorphous dielectrics, and some of results concerning TOF measurements should be reexamined.