A novel 80V-class HV-MOS platform technology featuring high-side capable 30V-gate-voltage drift-NMOSFET and a trigger controllable ESD protection BJT

摘要

An 80 V-class high voltage (HV) MOS platform integrating two types of 80 V-class novel structure devices, a high-side capable 30 V-gate-voltage drift-NMOSFET and an ESD protection BJT, is described. The 30 V-gate-voltage drift NMOSFET features a stacked source-side structure consisting of LOCOS, an extended source region, and a waved p+ stopper, enabling both off-state and on-state drain breakdown voltage to surpass 80 V. Despite its high gate voltage endurance of over 30 V, the specific on-resistance (Rsp) reaches as low as 275 mohm*mm2. The ESD protection BJT features a buffer base region, enabling the trigger voltage to surpass 100 V and the ESD endurance voltage to reach 4 kV-HBM. The trigger voltage can be controlled from 78 to 102 V by changing the buffer base size. These devices can be integrated with only one additional mask step and do not sacrifice the excellent performance of the other high and low voltage devices.