ESD PROTECTION CIRCUIT OF SILICON CONTROLLED RECTIFIER STRUCTURE CAPABLE OF OPERATING AT LOW TRIGGERING VOLTAGE

摘要

The present invention is formed on a predetermined region of the semiconductor substrate, the semiconductor substrate as to provide an electrostatic discharge protection circuit of the operation trigger voltage is LVTSCR structure high at the same time per unit area of ​​the current conduction efficiency, while good stability is low, the first conductivity type a well region of a second conductivity type, said well region and the constant is distance from the gate insulating film and a gate electrode, a first diffusion region of the first conductivity type formed in said well region, said gate electrode stacked on the selected surface of the semiconductor substrate side of the semiconductor is formed below the substrate surface on the gate electrode and a second diffusion region of a conductivity type, and said semiconductor substrate and said well region and in contact with said first diffusion region on the gate electrode the other side connected to a common ground with over formed and because it appears the second conductivity type third includes a diffusion region, an electrostatic discharge protection circuit having a LVTSCR structure according to the invention of the current conduction characteristics and the operating voltage are all superior characteristics associated with the input and output pads via the resistive element it is well suited to high-speed, low-voltage, electrostatic discharge protection device of a semiconductor integrated circuit. ; ESD, electrostatic discharge protection circuit, SCR, LVTSCR, motion trigger voltage, current conduction efficiency